 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications * * * * * The 3rd generation Enhancement-mode High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 20 25 50 25 50 200 150 -55 to 150 Unit V V A Diode forward current A JEDEC JEITA 2-21F2C Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range W C C TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2003-01-28 GT25Q301 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) tf toff VF trr Rth (j-c) Rth (j-c) IF = 25 A, VGE = 0 IF = 25 A, di/dt = -200 A/s Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Inductive load VCC = 600 V, IC = 25 A VGG = 15 V, RG = 43 (Note) 0.16 0.68 0.32 3.0 350 0.625 1.38 V ns C/W C/W Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 2.1 1360 0.10 0.30 Max 500 1.0 7.0 2.7 s Unit nA mA V V pF Note: Switching time measurement circuit and input/output waveforms VGE RG VCC -VGE IC RG L 0 90% 10% IC 90% 90% 10% td (on) tf toff ton tr 10% VCE 0 VCE 10% td (off) 10% 2 2003-01-28 GT25Q301 IC - VCE 50 20 Common emitter Tc = 25C 40 Common emitter VCE - VGE (V) Tc = -40C 16 (A) IC Collector-emitter voltage 20 30 15 VCE 20 10 10 12 Collector current 8 IC = 10 A 4 25 50 VGE = 9 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 Common emitter Tc = 25C 16 VCE - VGE (V) (V) Tc = 125C 16 VCE Collector-emitter voltage Collector-emitter voltage VCE 12 8 50 4 IC = 10 A 25 12 8 50 4 IC = 10 A 25 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 50 Common emitter 40 4 VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V 50 3 25 IC 30 Collector current (A) 2 IC = 10 A 20 25 1 Common emitter VGE = 15 V 10 Tc = 125C -40 0 0 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2003-01-28 GT25Q301 Switching Time ton, tr - RG 3 Common emitter VCC = 600 V VGG = 15 V IC = 25 A : Tc = 25C : Tc = 125C 1 Switching Time ton, tr - IC (s) 1 (s) ton ton 0.3 ton, tr 0.5 0.3 Switching time ton, tr 0.1 Switching time tr Common emitter VCC = 600 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C 0 5 10 15 20 25 30 tr 0.1 0.03 0.05 3 5 10 30 50 100 300 500 0.01 Gate resistance RG () Collector current IC (A) Switching Time toff, tf - RG 3 Common emitter VCC = 600 V VGG = 15 V IC = 25 A : Tc = 25C 1 : Tc = 125C 0.5 0.3 tf 0.1 1 toff Switching Time toff, tf - IC toff (s) (s) toff, tf 0.3 tf 0.1 Common emitter VCC = 600 V VGG = 15 V RG =43 : Tc = 25C : Tc = 125C 0 5 10 15 20 25 30 Switching time Switching time 500 toff, tf 0.03 5 10 30 50 100 300 0.05 3 Gate resistance RG () 0.01 Collector current IC (A) Switching Loss Eon, Eoff - IC Switching Loss Eon, Eoff - RG 30 Common emitter VCC = 600 V VGG = 15 V IC = 25 A 10 : Tc = 25C : Tc = 125C 5 3 Eoff 10 (mJ) (mJ) 3 Eon Eon, Eoff Eon Eon, Eoff 1 Eoff Switching loss Switching loss 0.3 1 0.5 3 5 10 30 50 100 300 500 0.1 Common emitter VCC = 600 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) 4 2003-01-28 GT25Q301 C - VCE 1000 VCE, VGE - QG Common emitter RL = 12 Tc = 25C 400 600 600 12 20 (V) 10000 800 16 (pF) Cies Capacitance C 1000 300 100 Common emitter VGE = 0 f = 1 MHz Tc = 25C 0.3 1 3 10 30 100 Coes Cres 400 VCE = 200 V 8 30 10 0.1 200 4 300 1000 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF - VF 50 Common emitter VGE = 0 40 -40 100 trr, Irr - IF 1000 (A) (A) Reverse recovery current Irr 25 30 Forward current IF 10 Irr 100 20 3 10 Tc = 125C Common emitter di/dt = -200 A/s VGE = 0 : Tc = 25C : Tc = 125C 5 10 15 20 25 10 30 0 0 1 2 3 4 5 1 0 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 50 30 IC max (pulsed)* IC max (continuous) 100 s* 50 s* 100 50 30 Reverse Bias SOA (A) IC Collector current 3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 3 10 30 100 10 ms* Collector current 5 DC operation 1 ms* IC 10 (A) 10 5 3 1 0.5 0.3 1 0.5 0.3 Tj 125C VGE = 15 V RG = 43 0.1 1 300 1000 3000 0.1 1 3 10 30 100 300 1000 3000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2003-01-28 Reverse recovery time trr trr 30 (ns) Gate-emitter voltage VGE 3000 Collector-emitter voltage VCE (V) GT25Q301 rth (t) - tw 102 Tc = 25C 101 Diode stage 100 IGBT stage 10-1 10-2 10-3 Transient thermal impedance rth (t) (C/W) 10-4 -5 10 10-4 10-3 10-2 10-1 100 101 102 Pulse width tw (s) 6 2003-01-28 GT25Q301 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-01-28 |
Price & Availability of GT25Q301
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |